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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1960
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1960 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
4.5 0.1 1.6 0.2 1.5 0.1
* Gate can be driven by 1.5 V * Low ON resistance RDS(on) = 0.8 MAX. RDS(on) = 0.2 MAX. @ VGS = 1.5 V, ID = 0.1 A @ VGS = 4.0 V, ID = 1.5 A
0.8 MIN.
FEATURES
S 0.42 0.06 1.5
D
G
0.42 0.06 0.47 0.06 3.0 0.41 +0.03 -0.05 Marking: NR
EQUIVALENT CURCUIT
Drain (D)
Gate (G) Gate protection diode Source (S)
Internal diode
PIN CONNECTIONS
S: Source D: Drain G: Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg PW 10 ms, duty cycle 50 % 16 cm2 x 0.7 mm ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 16 7.0 3.0 6.0 2.0 150 -55 to +150 UNIT V V A A W C C
Document No. D11223EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan
4.0 0.25
2.5 0.1
(c)
1996
2SK1960
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf VDD = 3 V, ID = 1.5 A, VGS(on) = 3 V, RG = 10 , RL = 2 TEST CONDITIONS VDS = 16 V, VGS = 0 VGS = 7.0 V, VDS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 1.5 A VGS = 1.5 V, ID = 0.1 A VGS = 2.5 V, ID = 1.5 A VGS = 4.0 V, ID = 1.5 A VDS = 3 V, VGS = 0, f = 1.0 MHz 0.5 2.0 0.35 0.17 0.12 370 320 115 70 200 150 200 0.8 0.3 0.2 0.8 MIN. TYP. MAX. 1.0 3.0 1.1 UNIT
A A
V S pF pF pF ns ns ns ns
2
2SK1960
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 10 5
dT - Derating Factor - %
FORWARD BIAS SAFE OPERATING AREA
1 10 m s m s
80
ID - Drain Current - A
2 1 0.5
60
PW
=
10
0
m
s
40
DC
20
0.2 0.1 Single pulse 1 2 5 10 20 VDS - Drain to Source Voltage - V 50
0
30 60 90 120 TA - Ambient Temperature - C
150
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 2.5
V 4.0
TRANSFER CHARACTERISTICS 10 VDS = 3 V
3.0
2.0
ID - Drain Current - A
2.5
2.0
V
V
V
1.5
1.8 V
ID - Drain Current - A
1
0.1
TA = 75 C 25 C -25 C
1.0
VGS = 1.5 V
0.5
0.01
0
0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V
1.0
0.001
0
1 2 3 VGS - Gate to Source Voltage - V
4
10
|yfs| - Forward Transfer Admittance - S
RDS(on) - Drain to Source On-State Resistance -
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 3 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 25 C 0 0.01 -25 C VGS = 1.5 V TA = 75 C 25 C -25 C
3 TA = -25 C 25 C 1 75 C
0.3
TA = 75 C
VGS = 2.5 V 10
0.1 0.01
0.03
0.1 0.3 1 ID - Drain Current - A
3
0.1 1 ID - Drain Current - A
3
2SK1960
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.4 ISD - Diode Forward Current - A 10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE
RDS(on) - Drain to Source On-State Resistance -
0.3 ID = 0.1 A 1.5 A 0.2 3A
1
0.1
0.1
0.01
0
2 4 6 8 VGS - Gate to Source Voltage - V
10
0.001 0.4
0.5 0.6 0.7 0.8 0.9 VSD - Source to Drain Voltage - V
1
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000 500 Ciss 200 Coss 100 50 td(on), tr, td(off), tf - Switching Time - ns Ciss, Crss, Coss - Capacitance - pF 1 000 500
SWITCHING CHARACTERISTICS VDD = 3 V VGS(on) = 3 V tr 200 100 td(on) 50 tf td(off)
Crss
20 10
VGS = 0 f = 1 MHz 1 2 5 10 20 50 VDS - Drain to Source Voltage - V 100
20 10 0.1
0.2
0.5 1 2 ID - Drain Current - A
5
10
4
2SK1960
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E
5

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